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| TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors * * * * Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP110 : TIP111 : TIP112 Value 60 80 100 60 80 100 5 2 4 50 2 50 150 - 65 ~ 150 Units V V V V V V V A A mA W W C C R1 R2 E B Equivalent Circuit C VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP110 : TIP111 : TIP112 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature R1 10k R2 0.6k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 ICBO Collector Cut-off Current : TIP110 : TIP111 : TIP112 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = 10V, IE = 0, f = 0.1MHz 1000 500 2.5 2.8 100 V V pF 1 1 1 2 mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA Test Condition IC = 30mA, IB = 0 Min. 60 80 100 Max. Units V V V ICEO (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TIP110/111/112 Typical Characteristics 2.0 IB = 500 uA 1.8 IC[A], COLLECTOR CURRENT IB = 450 uA IB = 400 uA 3 IB = 50 uA 0 IB = 3 10000 0 uA VCE = 4V 1.6 1.4 1.2 hFE, DC CURRENT GAIN IB uA = 250 1000 IB = 200 uA 1.0 0.8 0.6 100 IB = 150 uA 0.4 0.2 0.0 0 1 2 3 4 5 10 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 1000 IC = 500 IB f = 0.1 MHz 10 Cob[pF], CAPACITANCE 100 V BE(sat) 1 10 VCE(sat) 0.1 0.01 0.1 1 10 1 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 80 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 60 5mS DC 1 1mS 50 40 30 20 TIP 110 TIP 111 0.1 1 10 10 TIP 112 100 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TIP110/111/112 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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